IXFK170N20T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-264-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

170 A

Rds On - Drain-Source Resistance:

11 mOhms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

265 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

1.15 kW

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

26.16 mm

Length:

19.96 mm

Series:

IXFK170N20

Transistor Type:

1 N-Channel

Type:

GigaMOS Power MOSFET

Width:

5.13 mm

Brand:

IXYS

Forward Transconductance - Min:

85 S

Fall Time:

22 ns

Product Type:

MOSFET

Rise Time:

28 ns

Factory Pack Quantity:

25

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

80 ns

Typical Turn-On Delay Time:

33 ns

Unit Weight:

0.352740 oz

Tags

IXFK170N2, IXFK17, IXFK1, IXFK, IXF