SUP90N04-3M3P-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

90 A

Rds On - Drain-Source Resistance:

2.7 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

131 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

125 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Tube

Series:

SUP

Transistor Type:

1 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

169 S

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

45 ns

Typical Turn-On Delay Time:

11 ns

Unit Weight:

0.211644 oz

Tags

SUP90N04, SUP90N0, SUP90N, SUP90, SUP9, SUP