SISS46DN-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-1212-8S

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

45.3 A

Rds On - Drain-Source Resistance:

12.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

42 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

65.7 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET, PowerPAK

Packaging:

Reel

Series:

SIS

Transistor Type:

1 N-Channel TrenchFET Power MOSFET

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

50 S

Fall Time:

6 ns

Product Type:

MOSFET

Rise Time:

6 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

21 ns

Typical Turn-On Delay Time:

12 ns

Tags

SISS4, SISS, SIS