GS8162Z18DD-400I

GS8162Z18DD-400I
Mfr. #:
GS8162Z18DD-400I
メーカー:
GSI Technology
説明:
SRAM 2.5 or 3.3V 1M x 18 18M
ライフサイクル:
メーカー新製品
データシート:
GS8162Z18DD-400I データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
GS8162Z18DD-400I 詳しくは
製品属性
属性値
メーカー:
GSIテクノロジー
製品カテゴリ:
SRAM
メモリー容量:
18 Mbit
組織:
1 M x 18
アクセス時間:
4 ns
最大クロック周波数:
400 MHz
インターフェイスタイプ:
平行
供給電圧-最大:
3.6 V
供給電圧-最小:
2.3 V
供給電流-最大:
275 mA, 355 mA
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
BGA-165
包装:
トレイ
メモリタイプ:
SDR
シリーズ:
GS8162Z18DD
タイプ:
NBTパイプライン/フロースルー
ブランド:
GSIテクノロジー
感湿性:
はい
製品タイプ:
SRAM
ファクトリーパックの数量:
36
サブカテゴリ:
メモリとデータストレージ
商標名:
NBTSRAM
Tags
GS8162Z18DD, GS8162Z18D, GS8162Z1, GS8162Z, GS8162, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**r
    E**r
    RU

    The parcel was not delivered.

    2019-04-30
    S***v
    S***v
    RU

    Delivery is very fast, but transistors all in one bag, will have to understand where which

    2019-05-21
    P***n
    P***n
    RU

    Fast shipping. A quality product. Thank you!

    2019-09-24
    S***u
    S***u
    BY

    ok

    2019-08-22
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 4ns/2.5ns 165-Pin FBGA
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
画像 モデル 説明
GS8162Z18DGD-250

Mfr.#: GS8162Z18DGD-250

OMO.#: OMO-GS8162Z18DGD-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DD-200IV

Mfr.#: GS8162Z18DD-200IV

OMO.#: OMO-GS8162Z18DD-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DB-250IV

Mfr.#: GS8162Z18DB-250IV

OMO.#: OMO-GS8162Z18DB-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DB-200I

Mfr.#: GS8162Z18DB-200I

OMO.#: OMO-GS8162Z18DB-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DD-250IV

Mfr.#: GS8162Z18DD-250IV

OMO.#: OMO-GS8162Z18DD-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DGB-200IV

Mfr.#: GS8162Z18DGB-200IV

OMO.#: OMO-GS8162Z18DGB-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8162Z18DB-150

Mfr.#: GS8162Z18DB-150

OMO.#: OMO-GS8162Z18DB-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DD-375I

Mfr.#: GS8162Z18DD-375I

OMO.#: OMO-GS8162Z18DD-375I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DGD-400I

Mfr.#: GS8162Z18DGD-400I

OMO.#: OMO-GS8162Z18DGD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8162Z18DGB-250V

Mfr.#: GS8162Z18DGB-250V

OMO.#: OMO-GS8162Z18DGB-250V

SRAM 1.8/2.5V 1M x 18 18M
可用性
ストック:
Available
注文中:
5000
数量を入力してください:
GS8162Z18DD-400Iの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$30.62
$30.62
25
$28.43
$710.75
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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