FCPF7N60YDTU

FCPF7N60YDTU
Mfr. #:
FCPF7N60YDTU
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 600V N-Channel SuperFET
ライフサイクル:
メーカー新製品
データシート:
FCPF7N60YDTU データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
7 A
Rds On-ドレイン-ソース抵抗:
600 mOhms
Vgs th-ゲート-ソースしきい値電圧:
5 V
Vgs-ゲート-ソース間電圧:
30 V
Qg-ゲートチャージ:
30 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
31 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
高さ:
16.3 mm
長さ:
10.67 mm
シリーズ:
FCPF7N60
トランジスタタイプ:
1 N-Channel
幅:
4.7 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
フォワード相互コンダクタンス-最小:
6 S
立ち下がり時間:
32 ns
製品タイプ:
MOSFET
立ち上がり時間:
55 ns
ファクトリーパックの数量:
800
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
75 ns
典型的なターンオン遅延時間:
35 ns
単位重量:
0.090478 oz
Tags
FCPF7, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F
***et
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Package / Case:TO-220F; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,6.8A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.46ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 600 V 600 mOhm Flange Mount MDmesh II Plus Power Mosfet -TO-220FP
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 7.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F
***ark
SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
*** Stop Electro
Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***el Electronic
VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
***ure Electronics
SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 600V 7A 3-Pin TO-220 Full-Pak
***nell
MOSFET, N-CH, 600V, 7A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***icroelectronics
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
***et
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
モデル メーカー 説明 ストック 価格
FCPF7N60YDTU
DISTI # FCPF7N60YDTU-ND
ON SemiconductorMOSFET N-CH 600V 7A TO-220F
RoHS: Compliant
Min Qty: 800
Container: Tube
Temporarily Out of Stock
  • 800:$1.0428
FCPF7N60YDTU
DISTI # FCPF7N60YDTU
ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF7N60YDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 800:$0.7839
  • 1600:$0.7789
  • 3200:$0.7689
  • 4800:$0.7589
  • 8000:$0.7399
FCPF7N60YDTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
3483
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FCPF7N60YDTU
DISTI # 512-FCPF7N60YDTU
ON SemiconductorMOSFET 600V N-Channel SuperFET
RoHS: Compliant
147
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0600
FCPF7N60YDTU
DISTI # 8647938P
ON SemiconductorMOSFET N-CH 600V 7A SUPERFET TO220F, TU650
  • 25:£0.5340
画像 モデル 説明
MKS2B041001C00KSSD

Mfr.#: MKS2B041001C00KSSD

OMO.#: OMO-MKS2B041001C00KSSD-800

Film Capacitors 1uF 50 Volts 10%
可用性
ストック:
147
注文中:
2130
数量を入力してください:
FCPF7N60YDTUの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$1.59
$1.59
10
$1.35
$13.50
100
$1.08
$108.00
500
$0.95
$475.50
1000
$0.79
$788.00
2500
$0.73
$1 832.50
5000
$0.71
$3 530.00
10000
$0.68
$6 790.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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