R8010ANX

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220FP-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

560 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

62 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

40 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

4.8 mm

Length:

15.4 mm

Product:

MOSFET

Series:

R8010ANX

Transistor Type:

1 N-channel

Type:

Power MOSFET

Width:

10.3 mm

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

2.2 S

Fall Time:

25 ns

Product Type:

MOSFET

Rise Time:

54 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

97 ns

Typical Turn-On Delay Time:

43 ns

Part # Aliases:

R8010ANX

Unit Weight:

0.090478 oz

Tags

R8010, R801, R80