IRFHM830TR2PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

21 A

Rds On - Drain-Source Resistance:

4.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.8 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

31 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.7 W

Configuration:

Single

Packaging:

Reel

Height:

1.05 mm

Length:

3.3 mm

Transistor Type:

1 N-Channel

Width:

3.3 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

52 S

Fall Time:

9.2 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

400

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

SP001560438

Unit Weight:

0.070548 oz

Tags

IRFHM830T, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF