CSD18512Q5BT

Product Attribute

Attribute Value

Manufacturer:

Texas Instruments

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

VSON-Clip-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

1.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

98 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

139 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

NexFET

Packaging:

Reel

Series:

CSD18512Q5B

Transistor Type:

1 N-Channel

Brand:

Texas Instruments

Forward Transconductance - Min:

136 S

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

16 ns

Factory Pack Quantity:

250

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

31 ns

Typical Turn-On Delay Time:

7 ns

Unit Weight:

0.004081 oz

Tags

CSD1851, CSD185, CSD18, CSD1, CSD