FDMC86248

FDMC86248
Mfr. #:
FDMC86248
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm
ライフサイクル:
メーカー新製品
データシート:
FDMC86248 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FDMC86248 詳しくは
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
Power-33-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
150 V
Id-連続ドレイン電流:
3.4 A
Rds On-ドレイン-ソース抵抗:
90 mOhms
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
3.7 nC, 6.4 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
2.3 W
構成:
独身
商標名:
PowerTrench
包装:
リール
高さ:
0.8 mm
長さ:
3.3 mm
シリーズ:
FDMC86248
トランジスタタイプ:
1 N-Channel
幅:
3.3 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
フォワード相互コンダクタンス-最小:
10 S
立ち下がり時間:
2.8 ns
製品タイプ:
MOSFET
立ち上がり時間:
1.4 ns
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
11 ns
典型的なターンオン遅延時間:
6.9 ns
単位重量:
0.001133 oz
Tags
FDMC8624, FDMC862, FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curre
***emi
N-Channel Power Trench® MOSFET 150V, 13A, 90mΩ
***el Electronic
FAIRCHILD SEMICONDUCTOR FDMC86248 MOSFET Transistor, N Channel, 13 A, 150 V, 0.069 ohm, 10 V, 3.2 V
***r Electronics
Power Field-Effect Transistor, 3.4A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
モデル メーカー 説明 ストック 価格
FDMC86248
DISTI # V36:1790_06337916
ON SemiconductorPT5 150V/20V NCH POWER TRENCH0
    FDMC86248
    DISTI # FDMC86248CT-ND
    ON SemiconductorMOSFET N CH 150V 3.4A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FDMC86248
      DISTI # FDMC86248DKR-ND
      ON SemiconductorMOSFET N CH 150V 3.4A POWER33
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        FDMC86248
        DISTI # FDMC86248TR-ND
        ON SemiconductorMOSFET N CH 150V 3.4A POWER33
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape & Reel (TR)
        Temporarily Out of Stock
        • 3000:$0.9355
        FDMC86248
        DISTI # FDMC86248
        ON SemiconductorTrans MOSFET N-CH 150V 3.4A 8-Pin Power 33 T/R (Alt: FDMC86248)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel
        Asia - 0
        • 150000:$1.0820
        • 75000:$1.1000
        • 30000:$1.1379
        • 15000:$1.1786
        • 9000:$1.2222
        • 6000:$1.2692
        • 3000:$1.3200
        FDMC86248
        DISTI # FDMC86248
        ON SemiconductorTrans MOSFET N-CH 150V 3.4A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86248)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel
        Americas - 0
        • 30000:$0.8139
        • 18000:$0.8349
        • 12000:$0.8459
        • 6000:$0.8569
        • 3000:$0.8619
        FDMC86248
        DISTI # 512-FDMC86248
        ON SemiconductorMOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm
        RoHS: Compliant
        2764
        • 1:$1.9400
        • 10:$1.6500
        • 100:$1.3200
        • 500:$1.1500
        • 1000:$0.9570
        • 3000:$0.8920
        • 6000:$0.8590
        • 9000:$0.8250
        FDMC86248Fairchild Semiconductor Corporation 1885
          画像 モデル 説明
          ESD122DMYR

          Mfr.#: ESD122DMYR

          OMO.#: OMO-ESD122DMYR

          TVS Diodes / ESD Suppressors 2-Channel ESD Protection Diode for USB Type-C and HDMI 2.0 3-X2SON -40 to 125
          CY7C1041G30-10BAJXE

          Mfr.#: CY7C1041G30-10BAJXE

          OMO.#: OMO-CY7C1041G30-10BAJXE

          SRAM Async SRAMS
          BSZ099N06LS5ATMA1

          Mfr.#: BSZ099N06LS5ATMA1

          OMO.#: OMO-BSZ099N06LS5ATMA1

          MOSFET MV POWER MOS
          FDMC86240

          Mfr.#: FDMC86240

          OMO.#: OMO-FDMC86240

          MOSFET 150V N-Channel PowerTrench MOSFET
          NSR05T40P2T5G

          Mfr.#: NSR05T40P2T5G

          OMO.#: OMO-NSR05T40P2T5G

          Schottky Diodes & Rectifiers 0.5 A 40 V Schottky
          T491D227K016AT

          Mfr.#: T491D227K016AT

          OMO.#: OMO-T491D227K016AT

          Tantalum Capacitors - Solid SMD 16V 220uF 2917 10% ESR=900mOhms
          AAA3528LSEEZGKQBKS

          Mfr.#: AAA3528LSEEZGKQBKS

          OMO.#: OMO-AAA3528LSEEZGKQBKS

          Standard LEDs - SMD 3.5x2.8MM LOW CU RGB SMD
          CRCW060324K9FKEAC

          Mfr.#: CRCW060324K9FKEAC

          OMO.#: OMO-CRCW060324K9FKEAC

          Thick Film Resistors - SMD 1/10W 24.9Kohms 1% Commercial Use
          T491D227K016AT

          Mfr.#: T491D227K016AT

          OMO.#: OMO-T491D227K016AT-KEMET

          Cap Tant Solid 220uF 16V D CASE 10% (7.3 X 4.3 X 2.8mm) Inward L SMD 7343-31 0.9 Ohm 125C Automotive T/R
          ESD122DMYR

          Mfr.#: ESD122DMYR

          OMO.#: OMO-ESD122DMYR-TEXAS-INSTRUMENTS

          TVS DIODE 3.6V 8.4V 3X2SON
          可用性
          ストック:
          54
          注文中:
          2037
          数量を入力してください:
          FDMC86248の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
          参考価格(USD)
          単価
          小計金額
          1
          $1.94
          $1.94
          10
          $1.65
          $16.50
          100
          $1.32
          $132.00
          500
          $1.15
          $575.00
          1000
          $0.96
          $957.00
          2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
          皮切りに
          最新の製品
          • Gate Drivers
            The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
          • NCP137 700 mA LDO Regulators
            ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
          • NCP114 Low Dropout Regulators
            ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
          • Compare FDMC86248
            FDMC86240 vs FDMC86244 vs FDMC86248
          • LC717A00AR Touch Sensor
            These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
          • FDMQ86530L Quad-MOSFET
            ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
          Top