ZXMN10A07FTA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

800 mA

Rds On - Drain-Source Resistance:

700 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

2.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

806 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.02 mm

Length:

3.04 mm

Product:

MOSFET Small Signal

Series:

ZXMN10A07

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

1.4 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

1.6 S

Fall Time:

2.1 ns

Product Type:

MOSFET

Rise Time:

1.5 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

4.1 ns

Typical Turn-On Delay Time:

1.8 ns

Unit Weight:

0.000282 oz

Tags

ZXMN10A07FT, ZXMN10A07F, ZXMN10A07, ZXMN10A0, ZXMN10A, ZXMN10, ZXMN1, ZXMN, ZXM