FQD12P10TF

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

9.4 A

Rds On - Drain-Source Resistance:

290 mOhms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.39 mm

Length:

6.73 mm

Transistor Type:

1 P-Channel

Type:

MOSFET

Width:

6.22 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

6.3 S

Fall Time:

60 ns

Product Type:

MOSFET

Rise Time:

160 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

35 ns

Typical Turn-On Delay Time:

15 ns

Unit Weight:

0.139332 oz

Tags

FQD12P10T, FQD12P1, FQD12P, FQD12, FQD1, FQD