IRF2903ZPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

75 A

Rds On - Drain-Source Resistance:

2.4 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

160 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

290 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

120 S

Fall Time:

37 ns

Product Type:

MOSFET

Rise Time:

100 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

48 ns

Typical Turn-On Delay Time:

24 ns

Part # Aliases:

SP001561574

Unit Weight:

0.211644 oz

Tags

IRF2903, IRF290, IRF29, IRF2, IRF