IXTA1N200P3HV

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

2 kV

Id - Continuous Drain Current:

1 A

Rds On - Drain-Source Resistance:

40 Ohms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

23.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

125 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Brand:

IXYS

Forward Transconductance - Min:

400 mS

Fall Time:

80 ns

Product Type:

MOSFET

Rise Time:

26 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

37 ns

Typical Turn-On Delay Time:

16 ns

Unit Weight:

0.052911 oz

Tags

IXTA1N, IXTA1, IXTA, IXT