STW8N120K5

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.2 kV

Id - Continuous Drain Current:

6 A

Rds On - Drain-Source Resistance:

2 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

13.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

130 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

STW8N120K5

Brand:

STMicroelectronics

Fall Time:

27 ns

Product Type:

MOSFET

Rise Time:

11 ns

Factory Pack Quantity:

600

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

15.5 ns

Tags

STW8N1, STW8N, STW8, STW