IPB054N06N3GATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

4.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

82 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

115 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Series:

OptiMOS 3

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

47 S

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

68 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

24 ns

Part # Aliases:

G IPB054N06N3 IPB54N6N3GXT SP000446782

Unit Weight:

0.139332 oz

Tags

IPB054N06N3GA, IPB054N06N3G, IPB054N06, IPB054, IPB05, IPB0, IPB