SIZ340DT-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAIR-3x3-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

30 A, 40 A

Rds On - Drain-Source Resistance:

9.5 mOhms, 5.1 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

- 16 V, 20 V

Qg - Gate Charge:

19 nC, 35 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

16.7 W, 31 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Series:

SIZ

Transistor Type:

2 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

37 S, 60 S

Fall Time:

7 ns, 7 ns

Product Type:

MOSFET

Rise Time:

55 ns, 82 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

16 ns, 20 ns

Typical Turn-On Delay Time:

13 ns, 22 ns

Tags

SIZ34, SiZ3, SiZ