APT75GN60LDQ3G

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-264-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

1.45 V

Maximum Gate Emitter Voltage:

30 V

Continuous Collector Current at 25 C:

155 A

Pd - Power Dissipation:

536 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Packaging:

Tube

Continuous Collector Current Ic Max:

155 A

Height:

5.21 mm

Length:

26.49 mm

Operating Temperature Range:

- 55 C to + 175 C

Width:

20.5 mm

Brand:

Microchip / Microsemi

Continuous Collector Current:

155 A

Gate-Emitter Leakage Current:

600 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

1

Subcategory:

IGBTs

Unit Weight:

0.373904 oz

Tags

APT75GN6, APT75GN, APT75G, APT75, APT7, APT