IPI50R399CP

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

9 A

Rds On - Drain-Source Resistance:

399 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Series:

CoolMOS CE

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Infineon Technologies

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

14 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

80 ns

Typical Turn-On Delay Time:

35 ns

Part # Aliases:

IPI50R399CPXKSA1 IPI5R399CPXK SP000680738

Unit Weight:

0.084199 oz

Tags

IPI50R39, IPI50R3, IPI50R, IPI50, IPI5, IPI