TS13002ACT A3G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

400 V

Collector- Base Voltage VCBO:

700 V

Emitter- Base Voltage VEBO:

9 V

Collector-Emitter Saturation Voltage:

1.5 V

Maximum DC Collector Current:

0.3 A

Gain Bandwidth Product fT:

4 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

24

Packaging:

Ammo Pack

Brand:

Taiwan Semiconductor

Continuous Collector Current:

0.3 A

DC Collector/Base Gain hfe Min:

12

Pd - Power Dissipation:

0.6 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Tags

TS13002ACTA, TS13002A, TS13002, TS1300, TS130, TS13, TS1