APT13005DI-G1

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

450 V

Emitter- Base Voltage VEBO:

9 V

Collector-Emitter Saturation Voltage:

900 mV

Maximum DC Collector Current:

8 A

Gain Bandwidth Product fT:

4 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

APT13005

DC Current Gain hFE Max:

35 at 2 A, 5 V

Packaging:

Bulk

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

8 at 2 A, 5 V

Pd - Power Dissipation:

25 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3600

Subcategory:

Transistors

Unit Weight:

0.012102 oz

Tags

APT13005D, APT13005, APT130, APT13, APT1, APT