BD435S

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-126-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

32 V

Collector- Base Voltage VCBO:

32 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.2 V

Maximum DC Collector Current:

4 A

Gain Bandwidth Product fT:

3 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

BD435

Height:

11 mm

Length:

8 mm

Packaging:

Bulk

Width:

3.25 mm

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

4 A

DC Collector/Base Gain hfe Min:

40

Pd - Power Dissipation:

36 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Part # Aliases:

BD435S_NL

Unit Weight:

0.026843 oz

Tags

BD435, BD43, BD4