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FDMS0309AS

FDMS0309AS
Mfr. #:
FDMS0309AS
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET PT8 NCH 30/20V S PQF
ライフサイクル:
メーカー新製品
データシート:
FDMS0309AS データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
Power-56-8
チャネル数：
2 Channel
トランジスタの極性：
Nチャネル
構成：
デュアル
商標名：
PowerTrench SyncFET
包装：
リール
高さ：
1.1 mm
長さ：
6 mm
シリーズ：
FDMS0309AS
トランジスタタイプ：
2 N-channel
幅：
5 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
製品タイプ：
MOSFET
ファクトリーパックの数量：
3000
サブカテゴリ：
MOSFET
単位重量：
0.002402 oz
Tags
FDMS0309A, FDMS0309, FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***roFlash
Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R
***Yang
Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ow.cn
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
***rchild Semiconductor
The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
モデル メーカー 説明 ストック 価格
FDMS0309AS
DISTI # FDMS0309ASCT-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASDKR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASTR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2515
FDMS0309AS_SN00347
DISTI # FDMS0309AS_SN00347-ND		ON SemiconductorMOSFET N-CH
RoHS: Compliant
Min Qty: 1
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS0309AS
    DISTI # FDMS0309AS    		ON SemiconductorTrans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0309AS)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.2639
    • 6000:$0.2619
    • 12000:$0.2579
    • 18000:$0.2549
    • 30000:$0.2489
    FDMS0309AS
    DISTI # 68X0370    		ON SemiconductorPT8 NCH 30/20V S PQF / REEL0
    • 24000:$0.2140
    • 9000:$0.2210
    • 1:$0.2290
    FDMS0309AS
    DISTI # 512-FDMS0309AS    		ON SemiconductorMOSFET PT8 NCH 30/20V S PQF
    RoHS: Compliant    		8995
    • 1:$0.5900
    • 10:$0.4890
    • 100:$0.3160
    • 1000:$0.2530
    • 3000:$0.2130
    • 9000:$0.2060
    • 24000:$0.1980
    画像 モデル 説明
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    		 MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 9.3mOhm 8-VSONP
    MCP73213T-A6SI/MF

    Mfr.#: MCP73213T-A6SI/MF

    OMO.#: OMO-MCP73213T-A6SI-MF

    		 Battery Management Dual cell OVP battery charger
    LTC2944IDD#PBF

    Mfr.#: LTC2944IDD#PBF

    OMO.#: OMO-LTC2944IDD-PBF

    		 Battery Management 60V Battery Gas Gauge with Voltage, Current & Temperature Measurement
    CMT-8540S-SMT-TR

    Mfr.#: CMT-8540S-SMT-TR

    OMO.#: OMO-CMT-8540S-SMT-TR

    		 Speakers & Transducers Buzzer 8.5mm sq 4kHz 5V SMT
    CMT-8540S-SMT-TR

    Mfr.#: CMT-8540S-SMT-TR

    OMO.#: OMO-CMT-8540S-SMT-TR-CUI

    		 BUZZER, 8.5 MM SQUARE, 4 MM DE
    可用性
    ストック:
    Available
    注文中:
    1988
    数量を入力してください:
    FDMS0309ASの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $0.75
    $0.75
    10
    $0.63
    $6.30
    100
    $0.41
    $40.60
    1000
    $0.32
    $325.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
    皮切りに
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