IRFZ44ZLPBF

IRFZ44ZLPBF
Mfr. #:
IRFZ44ZLPBF
メーカー:
Infineon Technologies
説明:
MOSFET MOSFT 55V 51A 13.9mOhm 29nC
ライフサイクル:
メーカー新製品
データシート:
IRFZ44ZLPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFZ44ZLPBF DatasheetIRFZ44ZLPBF Datasheet (P4-P6)IRFZ44ZLPBF Datasheet (P7-P9)IRFZ44ZLPBF Datasheet (P10-P12)
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-262-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
55 V
Id-連続ドレイン電流:
51 A
Rds On-ドレイン-ソース抵抗:
13.9 mOhms
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
29 nC
Pd-消費電力:
80 W
構成:
独身
包装:
チューブ
高さ:
9.45 mm
長さ:
10.2 mm
トランジスタタイプ:
1 N-Channel
幅:
4.5 mm
ブランド:
インフィニオンテクノロジーズ
製品タイプ:
MOSFET
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
SP001571852
単位重量:
0.084199 oz
Tags
IRFZ44Z, IRFZ44, IRFZ4, IRFZ, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-262-3
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
*** Stop Electro
Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:51A; On Resistance, Rds(on):13.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
*** Source Electronics
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube / MOSFET N-CH 55V 49A TO-262
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***roFlash
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V
***ure Electronics
Single N-Channel 55 V 16.5 mOhm 48 nC HEXFET® Power Mosfet - TO-262
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 55V 45A TO-262
***i-Key Marketplace
OPTLMOS N-CHANNEL POWER MOSFET
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
P CHANNEL MOSFET, -55V, 31A, TO-262; Tra; P CHANNEL MOSFET, -55V, 31A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET; 55V; 104A; 8 MOHM; 86.7 NC QG; LOGIC LEVEL; TO-262
***et Europe
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:104A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
モデル メーカー 説明 ストック 価格
IRFZ44ZLPBF
DISTI # V99:2348_13892547
Infineon Technologies AGTrans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
450
  • 1000:$0.7856
  • 500:$0.9289
  • 100:$1.0427
  • 10:$1.2488
  • 1:$1.4255
IRFZ44ZLPBF
DISTI # IRFZ44ZLPBF-ND
Infineon Technologies AGMOSFET N-CH 55V 51A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube
5376In Stock
  • 1000:$0.9610
  • 500:$1.1598
  • 100:$1.4912
  • 10:$1.8560
  • 1:$2.0500
IRFZ44ZLPBF
DISTI # 26198408
Infineon Technologies AGTrans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
450
  • 100:$1.0566
  • 10:$1.2537
IRFZ44ZLPBF
DISTI # IRFZ44ZLPBF
Infineon Technologies AGTrans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRFZ44ZLPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.6939
  • 2000:$0.6689
  • 4000:$0.6449
  • 6000:$0.6229
  • 10000:$0.6119
IRFZ44ZLPBF
DISTI # SP001571852
Infineon Technologies AGTrans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-262 (Alt: SP001571852)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.0449
  • 10:€0.9279
  • 25:€0.8359
  • 50:€0.7599
  • 100:€0.6959
  • 500:€0.6429
  • 1000:€0.5969
IRFZ44ZLPBF
DISTI # 70018397
Infineon Technologies AGIRFZ44ZLPBF N-channel MOSFET Module,51A,55 V,3-Pin TO-262
RoHS: Compliant
0
  • 450:$2.0400
IRFZ44ZLPBF
DISTI # 942-IRFZ44ZLPBF
Infineon Technologies AGMOSFET MOSFT 55V 51A 13.9mOhm 29nC
RoHS: Compliant
1213
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8740
IRFZ44ZLPBF
DISTI # 8655857P
Infineon Technologies AGMOSFET N-CH 55V 51A HEXFET TO-262, TU370
  • 100:£0.8740
  • 250:£0.8220
  • 500:£0.7660
  • 1350:£0.6340
IRFZ44ZLPBF
DISTI # C1S322000604434
Infineon Technologies AGTrans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
450
  • 100:$1.0566
  • 10:$1.2537
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FFC & FPC Connectors 100X100 FFC SKT
5-103635-2

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OMO.#: OMO-5-103635-2-TE-CONNECTIVITY

Headers & Wire Housings LATCHING HDR SHRD 3P W/O HOLD-DN 15AU CNT
C1210X475K5RACAUTO

Mfr.#: C1210X475K5RACAUTO

OMO.#: OMO-C1210X475K5RACAUTO-KEMET

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 4.7uF 10% X7R
MAX14775EASA+

Mfr.#: MAX14775EASA+

OMO.#: OMO-MAX14775EASA--MAXIM-INTEGRATED

IC TXRX RS485/422 20MBPS 8SOIC
GRM31C5C1H104JA01L

Mfr.#: GRM31C5C1H104JA01L

OMO.#: OMO-GRM31C5C1H104JA01L-MURATA-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50Volts C0G 5%
可用性
ストック:
Available
注文中:
1984
数量を入力してください:
IRFZ44ZLPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$1.77
$1.77
10
$1.50
$15.00
100
$1.20
$120.00
500
$1.05
$525.00
1000
$0.87
$874.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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