We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IPB023N04NGATMA1 DISTI # IPB023N04NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB023N04NGATMA1 DISTI # IPB023N04NGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB023N04NGATMA1 DISTI # IPB023N04NGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB023N04N G DISTI # IPB023N04NG | Infineon Technologies AG | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB023N04NG) RoHS: Not Compliant Min Qty: 404 Container: Bulk | Americas - 0 |
|
| IPB023N04N G DISTI # 726-IPB023N04NG | Infineon Technologies AG | MOSFET N-Ch 40V 90A D2PAK-2 RoHS: Compliant | 0 | |
| IPB023N04NG | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1510 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: IPB020N10N5 OMO.#: OMO-IPB020N10N5 |
MOSFET N-Ch 100V 120A D2PAK-2 |
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Mfr.#: IPB020N04N G OMO.#: OMO-IPB020N04N-G |
MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 |
|
Mfr.#: IPB020N08N5ATMA1-CUT TAPE |
New and Original |
|
|
Mfr.#: IPB020NE7N3 OMO.#: OMO-IPB020NE7N3-1190 |
New and Original |
|
|
Mfr.#: IPB022N04LG OMO.#: OMO-IPB022N04LG-1190 |
Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
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Mfr.#: IPB022N04LG,022N04 OMO.#: OMO-IPB022N04LG-022N04-1190 |
New and Original |
|
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Mfr.#: IPB023N06N3G OMO.#: OMO-IPB023N06N3G-1190 |
140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
|
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Mfr.#: IPB027N10N 027N10N OMO.#: OMO-IPB027N10N-027N10N-1190 |
New and Original |
|
|
Mfr.#: IPB029N06N OMO.#: OMO-IPB029N06N-1190 |
New and Original |
|
Mfr.#: IPB020N08N5ATMA1 |
RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2 |
