FCPF190N65S3L1

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220F-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

14 A

Rds On - Drain-Source Resistance:

165 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

30 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

33 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

FCPF190N65S3L1

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

10 S

Fall Time:

15 ns

Product Type:

MOSFET

Rise Time:

23 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

52 ns

Typical Turn-On Delay Time:

19 ns

Unit Weight:

0.080072 oz

Tags

FCPF190N65, FCPF19, FCPF1, FCPF, FCP