IXTJ4N150

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.5 kV

Id - Continuous Drain Current:

2.5 A

Rds On - Drain-Source Resistance:

6 Ohms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

44.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

110 W

Channel Mode:

Enhancement

Packaging:

Tube

Height:

21.34 mm

Length:

6.13 mm

Series:

IXTJ4N150

Type:

High Voltage Power MOSFET

Width:

5.21 mm

Brand:

IXYS

Forward Transconductance - Min:

2.8 S

Fall Time:

22 ns

Product Type:

MOSFET

Rise Time:

23 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

42 ns

Typical Turn-On Delay Time:

19 ns

Unit Weight:

0.056438 oz

Tags

IXTJ, IXT