SI8481DB-T1-E1

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

MicroFoot-4

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

9.7 A

Rds On - Drain-Source Resistance:

17 mOhms

Vgs th - Gate-Source Threshold Voltage:

900 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

81 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.8 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 P-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

22 S

Fall Time:

110 ns

Product Type:

MOSFET

Rise Time:

20 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

400 ns

Typical Turn-On Delay Time:

7 ns

Tags

SI848, SI84, SI8