FDBL86566-F085

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

H-PSOF-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

240 A

Rds On - Drain-Source Resistance:

4.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

80 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Height:

2.4 mm

Length:

10.48 mm

Series:

FDBL86566_F085

Transistor Type:

1 N-Channel

Width:

9.9 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

29 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

39 ns

Typical Turn-On Delay Time:

37 ns

Part # Aliases:

FDBL86566_F085

Unit Weight:

0.029985 oz

Tags

FDBL865, FDBL8, FDBL, FDB