SQJ844AEP-T1_GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-SO-8L-4

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

8 A

Rds On - Drain-Source Resistance:

13.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

26 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

48 W

Configuration:

Dual

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

TrenchFET

Packaging:

Reel

Height:

1.04 mm

Length:

6.15 mm

Series:

SQ

Transistor Type:

2 N-Channel

Width:

5.13 mm

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

20 S

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

4.5 ns

Unit Weight:

0.017870 oz

Tags

SQJ844, SQJ84, SQJ8, SQJ