BSC014NE2LSI

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TDSON-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

1.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

52 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

74 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Reel

Height:

1.27 mm

Length:

5.9 mm

Transistor Type:

1 N-Channel

Width:

5.15 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

70 S

Fall Time:

3.6 ns

Product Type:

MOSFET

Rise Time:

5 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

25 ns

Typical Turn-On Delay Time:

5 ns

Part # Aliases:

BSC014NE2LSIATMA1 BSC14NE2LSIXT SP000911336

Unit Weight:

0.004174 oz

Tags

BSC014NE, BSC014, BSC01, BSC0, BSC