IPI110N20N3 G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

88 A

Rds On - Drain-Source Resistance:

10.7 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

65 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Tradename:

OptiMOS

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Series:

OptiMOS 3

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Infineon Technologies

Fall Time:

11 ns

Product Type:

MOSFET

Rise Time:

26 nS

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

41 nS

Part # Aliases:

IPI110N20N3GAKSA1 IPI11N2N3GXK SP000714304

Unit Weight:

0.084199 oz

Tags

IPI110, IPI11, IPI1, IPI