2N5643

Product Attribute

Attribute Value

Manufacturer:

Advanced Semiconductor, Inc.

Product Category:

RF Bipolar Transistors

RoHS:

Y

Transistor Type:

Bipolar Power

Technology:

Si

Transistor Polarity:

NPN

DC Collector/Base Gain hfe Min:

5

Collector- Emitter Voltage VCEO Max:

35 V

Emitter- Base Voltage VEBO:

4 V

Continuous Collector Current:

5 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Mounting Style:

Through Hole

Package / Case:

MT72

Packaging:

Tray

Operating Frequency:

175 MHz

Type:

RF Bipolar Power

Brand:

Advanced Semiconductor, Inc.

Gain Bandwidth Product fT:

200 MHz

Pd - Power Dissipation:

60 W

Product Type:

RF Bipolar Transistors

Subcategory:

Transistors

Unit Weight:

0.105822 oz

Tags

2N564, 2N56, 2N5