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STGP30H60DF

STGP30H60DF
Mfr. #:
STGP30H60DF
メーカー:
STMicroelectronics
説明:
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
ライフサイクル:
メーカー新製品
データシート:
STGP30H60DF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
STGP30H60DF 詳しくは STGP30H60DF Product Details
製品属性
属性値
メーカー：
STMicroelectronics
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-220-3
取り付けスタイル：
スルーホール
構成：
独身
コレクター-エミッター電圧VCEOMax：
600 V
コレクター-エミッター飽和電圧：
2.4 V
最大ゲートエミッタ電圧：
20 V
25℃での連続コレクタ電流：
60 A
Pd-消費電力：
260 W
最低動作温度：
- 40 C
最高作動温度：
+ 175 C
シリーズ：
STGP30H60DF
包装：
チューブ
ブランド：
STMicroelectronics
ゲートエミッタリーク電流：
250 nA
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
1000
サブカテゴリ：
IGBT
単位重量：
0.081130 oz
Tags
STGP30H60, STGP30H, STGP30, STGP3, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***icroelectronics
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***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ure Electronics
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***r Electronics
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***ark
Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:258W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-220; No. Of Pins:3Pins; Rohs Compliant: Yes
***th Star Micro
Transistor IGBT Chip N-CH 600V 60A 3-Pin (3+Tab) TO-220 Tube
***el Electronic
STMICROELECTRONICS STGP30NC60W IGBT Single Transistor, 30 A, 2.5 V, 200 W, 600 V, TO-220, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, N 600V 30A TO-220; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulsed Current Icm: 200A; Rise Time: 12ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ical
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***DA Technology Co., Ltd.
Product Description Demo for Development.
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Short-circuit rugged IGBT, TO-220, Tube
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Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
***ical
Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-220 Tube
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
IKP40N65F5 Series 650 V 74 A 55 W Through Hole DuoPack IGBT - PG-TO-220-3
***nsix Microsemi
Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
モデル メーカー 説明 ストック 価格
STGP30H60DF
DISTI # 30592835		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		50
  • 50:$1.7723
  • 10:$2.1420
  • 9:$3.1620
STGP30H60DF
DISTI # 497-13583-5-ND		STMicroelectronicsIGBT 600V 60A 260W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.7430
  • 500:$2.0297
  • 100:$2.3494
  • 50:$2.6802
  • 1:$3.1200
STGP30H60DFB
DISTI # 497-16483-5-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, HB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.6065
  • 500:$1.9035
  • 100:$2.3985
  • 50:$2.6460
  • 1:$3.2400
STGP30H60DF
DISTI # C1S730200783396		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		50
  • 50:$1.3900
  • 10:$1.6800
  • 1:$2.4800
STGP30H60DF
DISTI # STGP30H60DF		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube (Alt: STGP30H60DF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 50
  • 1:€1.8499
  • 10:€1.1689
  • 25:€0.8819
  • 50:€0.8629
  • 100:€0.8489
  • 500:€0.8309
  • 1000:€0.8029
STGP30H60DF
DISTI # STGP30H60DF		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: STGP30H60DF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.3900
  • 6000:$1.2900
  • 10000:$1.2900
STGP30H60DFB
DISTI # STGP30H60DFB		STMicroelectronicsIGBTs (Alt: STGP30H60DFB)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 50:€1.5909
  • 100:€1.3249
  • 200:€1.2229
  • 300:€1.1359
  • 500:€1.0599
STGP30H60DF
DISTI # 52AC7501		STMicroelectronicsIGBT, 600V, 60A, TO-220-3,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:260W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-220,No. of Pins:3Pins,Operating , RoHS Compliant: Yes3
  • 1:$1.7000
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0700
  • 1000:$0.9600
  • 2500:$0.7800
  • 5000:$0.7540
STGP30H60DF
DISTI # 511-STGP30H60DF		STMicroelectronicsIGBT Transistors 600V 30A High Speed Trench Gate IGBT
RoHS: Compliant		0
  • 1:$2.7800
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
  • 1000:$1.4700
  • 2000:$1.4000
STGP30H60DFB
DISTI # 511-STGP30H60DFB		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
RoHS: Compliant		2
  • 1:$2.6500
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.3100
  • 2000:$1.2200
STGP30H60DFSTMicroelectronicsSTGP30Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220
RoHS: Compliant		500Tube
  • 5:$2.8900
  • 50:$2.5200
  • 250:$2.1400
STGP30H60DFBSTMicroelectronics 
RoHS: Compliant		Europe - 1000
    STGP30H60DF
    DISTI # STGP30H60DF    		STMicroelectronics600V 60A 260W TO220
    RoHS: Compliant    		0
    • 10:€1.6300
    • 50:€1.4300
    • 200:€1.3300
    • 500:€1.2800
    STGP30H60DFSTMicroelectronicsINSTOCK500
      STGP30H60DF
      DISTI # 2851957      		STMicroelectronicsIGBT, 600V, 60A, TO-220-3
      RoHS: Compliant      		3
      • 5:£1.9400
      • 25:£1.8300
      • 100:£1.5800
      • 250:£1.5100
      • 500:£1.3600
      STGP30H60DFB
      DISTI # 2889922      		STMicroelectronicsIGBT, SINGLE, 600V, 60A, TO-220
      RoHS: Compliant      		0
      • 1:£2.6100
      • 10:£1.8700
      • 100:£1.6900
      • 250:£1.5000
      • 500:£1.3100
      STGP30H60DF
      DISTI # XSFP00000132711      		STMicroelectronicsInsulated Gate Bipolar Transistor, 60AI(C),600VV(BR)CES, N-Channel
      RoHS: Compliant      		336
      • 35:$5.7800
      • 336:$5.2500
      STGP30H60DFSTMicroelectronics600V,30A,high speed IGBT10
      • 1:$1.2300
      • 100:$1.1300
      • 500:$1.0400
      • 1000:$0.9800
      STGP30H60DF
      DISTI # 2851957      		STMicroelectronicsIGBT, 600V, 60A, TO-220-3
      RoHS: Compliant      		3
      • 5:$3.4000
      • 25:$2.9100
      • 100:$2.2000
      • 250:$1.8500
      • 500:$1.6000
      • 1000:$1.5400
      • 5000:$1.4800
      画像 モデル 説明
      STGP3NC120HD

      Mfr.#: STGP3NC120HD

      OMO.#: OMO-STGP3NC120HD

      		 IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
      STGP30V60DF

      Mfr.#: STGP30V60DF

      OMO.#: OMO-STGP30V60DF

      		 IGBT Transistors 600V 30A High Speed Trench Gate IGBT
      STGP30NC60W

      Mfr.#: STGP30NC60W

      OMO.#: OMO-STGP30NC60W

      		 IGBT Transistors N-channel MOSFET
      STGP35N35LZ

      Mfr.#: STGP35N35LZ

      OMO.#: OMO-STGP35N35LZ-STMICROELECTRONICS

      		 IGBT Transistors EAS 450mJ 345V PowerMESH IGBT
      STGP30H65F

      Mfr.#: STGP30H65F

      OMO.#: OMO-STGP30H65F-STMICROELECTRONICS

      		 IGBT Transistors Trench gte FieldStop IGBT 600V 30A
      STGP30H60DFB

      Mfr.#: STGP30H60DFB

      OMO.#: OMO-STGP30H60DFB-STMICROELECTRONICS

      		 TRENCH GATE FIELD-STOP IGBT, HB
      STGP3NB60HD

      Mfr.#: STGP3NB60HD

      OMO.#: OMO-STGP3NB60HD-STMICROELECTRONICS

      		 IGBT 600V 10A 50W TO220
      STGP30NC60S

      Mfr.#: STGP30NC60S

      OMO.#: OMO-STGP30NC60S-STMICROELECTRONICS

      		 IGBT 600V 55A 175W TO220
      STGP3HF60HD

      Mfr.#: STGP3HF60HD

      OMO.#: OMO-STGP3HF60HD-STMICROELECTRONICS

      		 IGBT BIPO 600V 3A TO220
      STGP3NB60H

      Mfr.#: STGP3NB60H

      OMO.#: OMO-STGP3NB60H-1190

      		 ブランドニューオリジナル
      可用性
      ストック:
      Available
      注文中:
      1985
      数量を入力してください:
      STGP30H60DFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
      量
      単価
      小計金額
      1
      $2.78
      $2.78
      10
      $2.36
      $23.60
      100
      $2.04
      $204.00
      250
      $1.94
      $485.00
      500
      $1.74
      $870.00
      1000
      $1.47
      $1 470.00
      2000
      $1.39
      $2 780.00
      5000
      $1.34
      $6 700.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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