IXTH12N70X2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

Discrete Semiconductor Modules

RoHS:

Y

Product:

Power MOSFET Modules

Type:

X2-Class

Vgs - Gate-Source Voltage:

30 V

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tube

Configuration:

Single

Brand:

IXYS

Transistor Polarity:

N-Channel

Fall Time:

27 ns

Id - Continuous Drain Current:

12 A

Pd - Power Dissipation:

180 W

Product Type:

Discrete Semiconductor Modules

Rds On - Drain-Source Resistance:

300 mOhms

Rise Time:

30 ns

Factory Pack Quantity:

30

Subcategory:

Discrete Semiconductor Modules

Tradename:

HiPerFET

Typical Turn-Off Delay Time:

78 ns

Typical Turn-On Delay Time:

24 ns

Vds - Drain-Source Breakdown Voltage:

700 V

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Tags

IXTH12N, IXTH12, IXTH1, IXTH, IXT