BSC030N03LSGATMA1

Mfr. #:: BSC030N03LSGATMA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 30V 100A TDSON-8
ライフサイクル:: メーカー新製品
データシート:: BSC030N03LSGATMA1 データシート
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製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-シングル

シリーズ: OptiMOS

包装: Digi-ReelR代替パッケージ

パーツエイリアス: BSC030N03LS BSC030N03LSGXT G SP000237661

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: 8-PowerTDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PG-TDSON-8

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 69W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 4300pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 23A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 3 mOhm @ 30A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

ゲートチャージ-Qg-Vgs: 55nC @ 10V

トランジスタ-極性: Nチャネル

Tags: BSC030N03LSG, BSC030N03L, BSC030N03, BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC030N03LSGATMA1 説明

***ure Electronics: N-Channel 30 V 3 mOhm OptiMOS3 Power-MOSFET - PG-TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

モデル	メーカー	説明	ストック	価格
BSC030N03LSGATMA1 DISTI # V72:2272_06384550	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant	3707	3000:$0.3750 1000:$0.3789 500:$0.4630 250:$0.5154 100:$0.5212 25:$0.6420 10:$0.6498 1:$0.7405
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	309In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	309In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.4206
BSC030N03LSGATMA1 DISTI # 31273903	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant	3707	3000:$0.3750 1000:$0.3789 500:$0.4630 250:$0.5154 100:$0.5212 25:$0.6420 20:$0.6498
BSC030N03LSGXT/IBM DISTI # BSC030N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 30000	5000:$0.4119 10000:$0.4109 20000:$0.4099 30000:$0.4089 50000:$0.4069
BSC030N03LSGATMA1 DISTI # 60R2485	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	4606	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LS G DISTI # 726-BSC030N03LS-G	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	4848	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LSGATMA1 DISTI # 726-BSC030N03LSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	4892	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	500	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
BSC030N03LSGATMA1 DISTI # 8259112P	Infineon Technologies AG	MOSFET N-CH 23A 30V OPTIMOS3 TDSON8EP, RL	1700	100:£0.2570
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,98A,69W,PG-TDSON-8	2739	1:$0.6732 3:$0.5972 10:$0.5016 100:$0.4499 1000:$0.4190
BSC030N03LSGATMA1 DISTI # C1S322000606399	Infineon Technologies AG	MOSFETs RoHS: Compliant	3707	250:$0.5326 100:$0.5342 25:$0.6523 10:$0.6551
BSC030N03LSGATMA1 DISTI # 1775436	Infineon Technologies AG	MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant	4606	1:$1.5100 10:$1.2800 100:$0.9800 500:$0.8660 1000:$0.6840 5000:$0.6130
BSC030N03LSGATMA1 DISTI # 1775436	Infineon Technologies AG	MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant	4606	5:£0.6060 25:£0.5490 100:£0.4120 250:£0.3690 500:£0.3260

画像	モデル	説明
	Mfr.#: BSC030N04NS G OMO.#: OMO-BSC030N04NS-G	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N03MSGATMA1 OMO.#: OMO-BSC030N03MSGATMA1	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
	Mfr.#: BSC030N03LS G OMO.#: OMO-BSC030N03LS-G	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N03LS G OMO.#: OMO-BSC030N03LS-G-1190	Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G)
	Mfr.#: BSC030N03LSG OMO.#: OMO-BSC030N03LSG-1190	Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC030N03MS G OMO.#: OMO-BSC030N03MS-G-1190	Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP
	Mfr.#: BSC030N03MSG OMO.#: OMO-BSC030N03MSG-1190	ブランドニューオリジナル
	Mfr.#: BSC030N03SL OMO.#: OMO-BSC030N03SL-1190	ブランドニューオリジナル
	Mfr.#: BSC030N04NS G OMO.#: OMO-BSC030N04NS-G-1190	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC030N04NSGATMA1 OMO.#: OMO-BSC030N04NSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 100A TDSON-8

BSC030N03LSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes