NSVT45010MW6T1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Transistor Polarity:

PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

- 45 V

Collector- Base Voltage VCBO:

- 50 V

Emitter- Base Voltage VEBO:

- 5 V

Collector-Emitter Saturation Voltage:

- 300 mV

Maximum DC Collector Current:

- 100 mA

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

475 at - 2 mA, - 5 V

Packaging:

Reel

Brand:

ON Semiconductor

DC Collector/Base Gain hfe Min:

220 at - 2 mA, - 5 V

Pd - Power Dissipation:

380 mW

Product Type:

BJTs - Bipolar Transistors

Qualification:

AEC-Q101

Factory Pack Quantity:

3000

Subcategory:

Transistors

Unit Weight:

0.000265 oz

Tags

NSVT45, NSVT4, NSVT, NSV