FDS8958B

Mfr. #:: FDS8958B
メーカー:: ON Semiconductor
説明:: MOSFET N/P-CH 30V 8SOIC
ライフサイクル:: メーカー新製品
データシート:: FDS8958B データシート
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製品属性
属性値

メーカー: フェアチャイルドセミコンダクター

製品カテゴリ: FET-アレイ

シリーズ: PowerTrenchR

包装: Digi-ReelR代替パッケージ

単位重量: 0.006596 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: デュアルデュアルドレイン

FETタイプ: NおよびPチャネル

パワーマックス: 900mW

トランジスタタイプ: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 540pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 6.4A, 4.5A

Rds-On-Max-Id-Vgs: 26 mOhm @ 6.4A, 10V

Vgs-th-Max-Id: 3V @ 250μA

ゲートチャージ-Qg-Vgs: 12nC @ 10V

Pd-電力損失: 1.6 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 2 nS 6 nS

立ち上がり時間: 2 nS 6 nS

Vgs-Gate-Source-Voltage: 20 V 25 V

Id-連続-ドレイン-電流: 6.4 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 26 mOhms 51 mOhms

トランジスタ-極性: NチャネルPチャネル

典型的なターンオフ遅延時間: 12 nS 17 nS

典型的なターンオン遅延時間: 4.3 nS 6 nS

チャネルモード: 強化

Tags: FDS8958B, FDS8958, FDS895, FDS89, FDS8, FDS

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS8958B 説明

***ure Electronics: Dual N & P-Channel 30 V 26 mO Surface Mount PowerTrench Mosfet - SOIC-8

***et Europe: Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R

***rchild Semiconductor: These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Market price

モデル	メーカー	説明	ストック	価格
FDS8958B DISTI # V79:2366_17800188	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC T/R	18292	25000:$0.2294 10000:$0.2331 2500:$0.2362 1000:$0.2735 100:$0.3249 10:$0.4400 1:$0.5004
FDS8958B DISTI # V72:2272_06300906	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC T/R	5380	6000:$0.2512 3000:$0.2547 1000:$0.2814 500:$0.3774 250:$0.3814 100:$0.3852 25:$0.5807 10:$0.5872 1:$0.7040
FDS8958B DISTI # FDS8958BCT-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3148In Stock	1000:$0.3377 500:$0.4222 100:$0.5699 10:$0.7390 1:$0.8400
FDS8958B DISTI # FDS8958BDKR-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3148In Stock	1000:$0.3377 500:$0.4222 100:$0.5699 10:$0.7390 1:$0.8400
FDS8958B DISTI # FDS8958BTR-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.2972
FDS8958B_G DISTI # FDS8958B_G-ND	ON Semiconductor	MOSFET N/P-CH 30V 6.4A/4.5A 8SO RoHS: Compliant Container: Tape & Reel (TR)	Limited Supply - Call
FDS8958B DISTI # 26120316	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC T/R	18292	10000:$0.2331 2500:$0.2362 1000:$0.2735 100:$0.3249 40:$0.4400
FDS8958B DISTI # 30716783	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC T/R	5380	6000:$0.2512 3000:$0.2548 1000:$0.2814 500:$0.3774 250:$0.3814 100:$0.3852 27:$0.5807
FDS8958B DISTI # FDS8958B	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: FDS8958B) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 3	1:$0.2939 25:$0.2929 62:$0.2919 125:$0.2909 312:$0.2909 625:$0.2899 1250:$0.2889
FDS8958B DISTI # FDS8958B	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8958B) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 567500	2500:$0.2779 5000:$0.2769 10000:$0.2769 15000:$0.2759 25000:$0.2749
FDS8958B DISTI # FDS8958B	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R (Alt: FDS8958B) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
FDS8958B DISTI # 31Y1411	ON Semiconductor	MOSFET, N & P CH, 130V, 6.4A, SOIC-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	2239	1:$0.7800 10:$0.6420 25:$0.5660 50:$0.4900 100:$0.4140 250:$0.3870 500:$0.3590 1000:$0.3320
FDS8958B. DISTI # 29AC6322	Fairchild Semiconductor Corporation	FET 30V 26.0 MOHM SO8 ROHS COMPLIANT: YES	0	1:$0.2840 2500:$0.2820 5000:$0.2770 10000:$0.2710 15000:$0.2670 25000:$0.2630
FDS8958B	ON Semiconductor	RoHS: Not Compliant	2500	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
FDS8958B	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 6.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	83155	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
FDS8958B DISTI # 512-FDS8958B	ON Semiconductor	MOSFET 30V 6.4A Dual N&P Ch PowerTrench RoHS: Compliant	1990	1:$0.7800 10:$0.6420 100:$0.4140 1000:$0.3320 2500:$0.2800 10000:$0.2700
FDS8958B DISTI # 8063674P	ON Semiconductor	MOSFETFAIRCHILDFDS8958B, RL	30	50:£0.3240 100:£0.3110 500:£0.2990 1000:£0.2870
FDS8958B DISTI # 8063674	ON Semiconductor	MOSFETFAIRCHILDFDS8958B, PK	390	10:£0.5420 50:£0.3240 100:£0.3110 500:£0.2990 1000:£0.2870
FDS8958B DISTI # 2454159	ON Semiconductor	MOSFET, N & P CH, 130V, 6.4A, SOIC-8 RoHS: Compliant	2239	1:$1.2400 10:$1.0200 100:$0.6560 1000:$0.5250 2500:$0.4440 10000:$0.4280 25000:$0.4100
FDS8958B DISTI # 2454159RL	ON Semiconductor	MOSFET, N & P CH, 130V, 6.4A, SOIC-8 RoHS: Compliant	0	1:$1.2400 10:$1.0200 100:$0.6560 1000:$0.5250 2500:$0.4440 10000:$0.4280 25000:$0.4100
FDS8958B DISTI # C1S541901560452	ON Semiconductor	MOSFETs RoHS: Compliant	18292	1000:$0.2799 500:$0.3296 100:$0.3308 10:$0.4447
FDS8958B DISTI # C1S226600457710	ON Semiconductor	Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R RoHS: Compliant	5380	250:$0.3965 100:$0.3968 25:$0.5920 10:$0.5930
FDS8958B DISTI # 2454159	ON Semiconductor	MOSFET, N & P CH, 130V, 6.4A, SOIC-8 RoHS: Compliant	2329	5:£0.5520 25:£0.5050 100:£0.3160 250:£0.2820 500:£0.2480

画像	モデル	説明
	Mfr.#: FDS8928A OMO.#: OMO-FDS8928A	MOSFET SO-8 COMP N-P-CH
	Mfr.#: FDS8882 OMO.#: OMO-FDS8882	MOSFET 30V 9A N-Channel PowerTrench
	Mfr.#: FDS86141-NL OMO.#: OMO-FDS86141-NL-1190	ブランドニューオリジナル
	Mfr.#: FDS8858H OMO.#: OMO-FDS8858H-1190	ブランドニューオリジナル
	Mfr.#: FDS8880 OMO.#: OMO-FDS8880-ON-SEMICONDUCTOR	MOSFET N-CH 30V 11.6A 8SOIC
	Mfr.#: FDS8926A-NL OMO.#: OMO-FDS8926A-NL-1190	ブランドニューオリジナル
	Mfr.#: FDS8928A-NL OMO.#: OMO-FDS8928A-NL-1190	ブランドニューオリジナル
	Mfr.#: FDS8928A-Q OMO.#: OMO-FDS8928A-Q-1190	ブランドニューオリジナル
	Mfr.#: FDS8949-NL OMO.#: OMO-FDS8949-NL-1190	ブランドニューオリジナル
	Mfr.#: FDS8984_F123 OMO.#: OMO-FDS8984-F123-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V 8-SOIC

FDS8958B

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes