STW21NM60N

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

17 A

Rds On - Drain-Source Resistance:

190 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

140 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

20.15 mm

Length:

15.75 mm

Series:

STW21NM60N

Transistor Type:

1 N-Channel

Type:

Power MOSFET

Width:

5.15 mm

Brand:

STMicroelectronics

Forward Transconductance - Min:

12 S

Fall Time:

31 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

84 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

1.340411 oz

Tags

STW21NM60N, STW21NM6, STW21NM, STW21, STW2, STW