TK7P60W5,RVQ

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

7 A

Rds On - Drain-Source Resistance:

540 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

16 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

60 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Series:

TK7P60W5

Transistor Type:

1 N-Channel

Width:

5.5 mm

Brand:

Toshiba

Fall Time:

5 ns

Product Type:

MOSFET

Rise Time:

40 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

70 ns

Typical Turn-On Delay Time:

60 ns

Unit Weight:

0.139332 oz

Tags

TK7P60W5, TK7P60W, TK7P60, TK7P6, TK7P, TK7