2N2907Ae3

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-206AA-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.4 V

Maximum DC Collector Current:

600 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

450 at 1 mA, 10 V

Packaging:

Bulk

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

50 at 500 mA, 10 V

Pd - Power Dissipation:

0.5 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

2N2907Ae, 2N2907A, 2N2907, 2N290, 2N29, 2N2