STP30NM60ND

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

25 A

Rds On - Drain-Source Resistance:

130 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

190 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

STB30NM60ND

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

75 ns

Product Type:

MOSFET

Rise Time:

50 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

110 ns

Typical Turn-On Delay Time:

20 ns

Unit Weight:

1.340411 oz

Tags

STP30NM6, STP30NM, STP30N, STP30, STP3, STP