MRF6V10010NR4

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

E

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

100 V

Gain:

25 dB

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

PLD-1.5

Packaging:

Reel

Configuration:

Single Dual Source

Height:

1.83 mm

Length:

6.73 mm

Operating Frequency:

960 MHz to 1400 MHz

Series:

MRF6V10010N

Type:

RF Power MOSFET

Width:

5.97 mm

Brand:

NXP / Freescale

Channel Mode:

Enhancement

Moisture Sensitive:

Yes

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

100

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage:

1.7 V

Part # Aliases:

935321297531

Unit Weight:

0.009877 oz

Tags

MRF6V10, MRF6V1, MRF6V, MRF6, MRF