T2G6003028-FL

T2G6003028-FL
Mfr. #:
T2G6003028-FL
メーカー:
Qorvo
説明:
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
ライフサイクル:
メーカー新製品
データシート:
T2G6003028-FL データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
T2G6003028-FL 詳しくは
製品属性
属性値
メーカー:
カーボ
製品カテゴリ:
RFJFETトランジスタ
JBoss:
Y
トランジスタタイプ:
HEMT
テクノロジー:
GaN SiC
包装:
トレイ
シリーズ:
T2G
ブランド:
カーボ
感湿性:
はい
製品タイプ:
RFJFETトランジスタ
ファクトリーパックの数量:
50
サブカテゴリ:
トランジスタ
パーツ番号エイリアス:
1100007
Tags
T2G6003028-F, T2G6003, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
モデル メーカー 説明 ストック 価格
T2G6003028-FL
DISTI # 772-T2G6003028-FL
QorvoRF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
RoHS: Compliant
108
  • 1:$157.9200
  • 25:$142.5200
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IC RF AMP 2GHZ 32LFCSP
可用性
ストック:
414
注文中:
2397
数量を入力してください:
T2G6003028-FLの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$157.92
$157.92
25
$142.52
$3 563.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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