IXTA1N170DHV

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.7 kV

Id - Continuous Drain Current:

1 A

Rds On - Drain-Source Resistance:

16 Ohms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

47 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

290 W

Configuration:

Single

Channel Mode:

Depletion

Packaging:

Tube

Series:

Standard

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

570 mS

Fall Time:

216 ns

Product Type:

MOSFET

Rise Time:

38 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

130 ns

Typical Turn-On Delay Time:

46 ns

Unit Weight:

0.077603 oz

Tags

IXTA1N1, IXTA1N, IXTA1, IXTA, IXT