IPA057N06N3G

IPA057N06N3G
Mfr. #:
IPA057N06N3G
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Lifecycle:
New from this manufacturer.
Datasheet:
IPA057N06N3G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INF
Product Category
FETs - Single
Tags
IPA057N06N3G, IPA057N06N3, IPA057N06, IPA057, IPA05, IPA0, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
IPA057N06N3GXKSA1
DISTI # V99:2348_06383876
Infineon Technologies AGTrans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
440
  • 10000:$0.8185
  • 5000:$0.8460
  • 2500:$0.8738
  • 1000:$0.9211
  • 500:$1.0478
  • 100:$1.1779
  • 10:$1.4236
  • 1:$1.6317
IPA057N06N3GXKSA1
DISTI # IPA057N06N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 60V 60A TO220-3-31
RoHS: Compliant
Min Qty: 1
Container: Tube
321In Stock
  • 1000:$1.0438
  • 500:$1.2597
  • 100:$1.6196
  • 10:$2.0160
  • 1:$2.2300
IPA057N06N3GXKSA1
DISTI # 26197707
Infineon Technologies AGTrans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
440
  • 100:$1.1750
  • 10:$1.4195
  • 7:$1.6267
IPA057N06N3GXKSA1
DISTI # IPA057N06N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA057N06N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$0.9419
  • 1000:$0.9079
  • 2000:$0.8759
  • 3000:$0.8459
  • 5000:$0.8309
IPA057N06N3GXKSA1
DISTI # 34AC1644
Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes242
  • 1:$1.9300
  • 10:$1.6400
  • 100:$1.3100
  • 500:$1.1500
IPA057N06N3 G
DISTI # 726-IPA057N06N3G
Infineon Technologies AGMOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
RoHS: Compliant
500
  • 1:$1.7700
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
IPA057N06N3GXKSA1
DISTI # 726-IPA057N06N3GXKSA
Infineon Technologies AGMOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
RoHS: Compliant
494
  • 1:$1.9300
  • 10:$1.6400
  • 100:$1.3100
  • 500:$1.1500
IPA057N06N3GInfineon Technologies AGPower Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
31105
  • 1000:$0.7900
  • 500:$0.8300
  • 100:$0.8700
  • 25:$0.9000
  • 1:$0.9700
IPA057N06N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
6814
  • 1000:$0.7900
  • 500:$0.8300
  • 100:$0.8700
  • 25:$0.9000
  • 1:$0.9700
IPA057N06N3GXKSA1
DISTI # 8922220P
Infineon Technologies AGMOSFET N-CHANNEL 60V 60A OPTIMOS TO220, TU310
  • 20:£1.0540
  • 50:£0.9810
  • 100:£0.9080
  • 200:£0.8630
IPA057N06N3GXKSA1
DISTI # C1S322000562147
Infineon Technologies AGTrans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
440
  • 100:$1.1759
  • 10:$1.4208
IPA057N06N3GXKSA1
DISTI # 2781061
Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220
RoHS: Compliant
267
  • 5:£1.0600
  • 25:£0.9910
  • 100:£0.8720
  • 250:£0.8560
  • 500:£0.8400
IPA057N06N3GXKSA1
DISTI # 2781061
Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220
RoHS: Compliant
242
  • 5:$3.0900
  • 25:$2.6900
  • 100:$2.1900
  • 250:$1.8500
  • 500:$1.6000
  • 1000:$1.5200
  • 5000:$1.4400
Image Part # Description
IPA057N08N3 G

Mfr.#: IPA057N08N3 G

OMO.#: OMO-IPA057N08N3-G

MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
IPA057N06N3 G

Mfr.#: IPA057N06N3 G

OMO.#: OMO-IPA057N06N3-G

MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
IPA057N06N3GXKSA1

Mfr.#: IPA057N06N3GXKSA1

OMO.#: OMO-IPA057N06N3GXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 60A TO220-3-31
IPA057N08N3GXKSA1

Mfr.#: IPA057N08N3GXKSA1

OMO.#: OMO-IPA057N08N3GXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 80V 60A TO220-3
IPA057N08N3GXK

Mfr.#: IPA057N08N3GXK

OMO.#: OMO-IPA057N08N3GXK-1190

Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1)
IPA057N06N

Mfr.#: IPA057N06N

OMO.#: OMO-IPA057N06N-1190

New and Original
IPA057N08N3G

Mfr.#: IPA057N08N3G

OMO.#: OMO-IPA057N08N3G-1190

Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPA057N08N3G,057N08N

Mfr.#: IPA057N08N3G,057N08N

OMO.#: OMO-IPA057N08N3G-057N08N-1190

New and Original
IPA057N08N3 G

Mfr.#: IPA057N08N3 G

OMO.#: OMO-IPA057N08N3-G-124

Darlington Transistors MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
IPA057N06N3 G

Mfr.#: IPA057N06N3 G

OMO.#: OMO-IPA057N06N3-G-126

IGBT Transistors MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of IPA057N06N3G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.14
$1.14
10
$1.09
$10.86
100
$1.03
$102.86
500
$0.97
$485.70
1000
$0.91
$914.30
Start with
Newest Products
  • IO-Link™ Devices
    Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
  • Large Diameter Clear Hole Spacers
    RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
  • WE-ExB Series Common Mode Power Line Choke
    Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
  • CPI2-B1-REU Production Device Programmer
    Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
  • CFSH05-20L Schottky Diode
    Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
Top