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IDH10G65C6XKSA1

IDH10G65C6XKSA1
Mfr. #:
IDH10G65C6XKSA1
メーカー:
Infineon Technologies
説明:
Schottky Diodes & Rectifiers SIC DIODES
ライフサイクル:
メーカー新製品
データシート:
IDH10G65C6XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IDH10G65C6XKSA1 詳しくは
製品属性
属性値
メーカー：
インフィニオン
製品カテゴリ：
ショットキーダイオードと整流器
JBoss：
Y
製品：
ショットキーシリコンカーバイドダイオード
取り付けスタイル：
スルーホール
パッケージ/ケース：
TO-220-2
場合-順電流：
24 A
Vrrm-繰り返し逆電圧：
650 V
Vf-順方向電圧：
1.25 V
Ifsm-順方向サージ電流：
55 A
構成：
独身
テクノロジー：
SiC
Ir-逆電流：
1 uA
最低動作温度：
- 55 C
最高作動温度：
+ 175 C
包装：
チューブ
ブランド：
インフィニオンテクノロジーズ
Pd-消費電力：
72 W
製品タイプ：
ショットキーダイオードと整流器
ファクトリーパックの数量：
500
サブカテゴリ：
ダイオードと整流器
パーツ番号エイリアス：
IDH10G65C6 SP001620590
単位重量：
0.070548 oz
Tags
IDH10G6, IDH10G, IDH10, IDH1, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Diode Schottky SiC 650V 24A 2-Pin(2+Tab) TO-220 Tube
***ronik
SiC-Diode 10A 650V 1,25V TO220
***i-Key
DIODE SCHOTTKY 650V 24A TO220-2
***ure Electronics
650V, 24A, TO-220.
***ark
Sic Schottky Diode, 650V, 24A, To-220; Product Range:coolsic 6G 650V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:14.7Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 24A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:24A; Total Capacitive Charge Qc:14.7nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):24A; Forward Surge Current Ifsm Max:55A; Forward Voltage VF Max:1.35V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC 650V 24A TO-220; Gamma Prodotti:CoolSiC 6G 650V Series; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:24A; Potenza Reattiva Capacitiva Qc:14.7nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):24A; Corrente di Picco Diretta Ifsm Max:55A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.35V
***ineon
The CoolSiC Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). | Summary of Features: The lowest V F: 1.25V; Best-in-class figure of merit (Q c x V F); No reverse recovery charge; Temperature independent switching behavior; High dv/dt ruggedness; Optimized thermal behavior | Benefits: Improved system efficiency over all load conditions; Increased system power density; Reduced cooling requirements and increased system reliability; Enables extremely fast switching; Easy and effective match with CoolMOS 7 families; Optimal price performance | Target Applications: Server; Telecom; PC power; Solar; Lighting
CoolSiC™ 650V Schottky 6th Generation Diodes
Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology and a novel Schottky metal system. This results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC™ Generation 6 complement the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
モデル メーカー 説明 ストック 価格
IDH10G65C6XKSA1
DISTI # V36:1790_18191486		Infineon Technologies AGSIC DIODES0
  • 500000:$1.9660
  • 250000:$1.9700
  • 50000:$2.5580
  • 5000:$3.7430
  • 500:$3.9500
IDH10G65C6XKSA1
DISTI # IDH10G65C6XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 24A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		1692In Stock
  • 2500:$2.2444
  • 500:$2.8013
  • 100:$3.2906
  • 25:$3.7968
  • 10:$4.0160
  • 1:$4.4700
IDH10G65C6XKSA1
DISTI # IDH10G65C6XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDH10G65C6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$2.0900
  • 5000:$2.0900
  • 2000:$2.1900
  • 1000:$2.2900
  • 500:$2.3900
IDH10G65C6XKSA1
DISTI # SP001620590		Infineon Technologies AGSIC DIODES (Alt: SP001620590)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.7900
  • 100:€1.9900
  • 500:€1.9900
  • 50:€2.0900
  • 25:€2.1900
  • 10:€2.2900
  • 1:€2.4900
IDH10G65C6XKSA1
DISTI # 33AC2814		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 24A, TO-220,Product Range:CoolSiC 6G 650V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:24A,Total Capacitive Charge Qc:14.7nC,Diode Case RoHS Compliant: Yes490
  • 500:$2.8300
  • 250:$3.1500
  • 100:$3.3200
  • 50:$3.4900
  • 25:$3.6600
  • 10:$3.8300
  • 1:$4.5000
IDH10G65C6XKSA1
DISTI # 726-IDH10G65C6XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		5099
  • 1:$4.4600
  • 10:$3.7900
  • 100:$3.2900
  • 250:$3.1200
  • 500:$2.8000
  • 1000:$2.3600
  • 2500:$2.2400
IDH10G65C6XKSA1
DISTI # IDH10G65C6		Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,650V,10A,72W,PG-TO220-283
  • 50:$2.9600
  • 10:$3.2900
  • 3:$3.7300
  • 1:$4.1400
IDH10G65C6XKSA1
DISTI # 2779280		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 24A, TO-220552
  • 500:£2.1800
  • 250:£2.4300
  • 100:£2.5600
  • 10:£2.9500
  • 1:£3.8700
IDH10G65C6XKSA1
DISTI # 2779280		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 24A, TO-220
RoHS: Compliant		545
  • 100:$3.8500
  • 10:$4.3500
  • 1:$4.6500
画像 モデル 説明
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LFUSCD10065A

Mfr.#: LFUSCD10065A

OMO.#: OMO-LFUSCD10065A

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SCS310AHGC9

Mfr.#: SCS310AHGC9

OMO.#: OMO-SCS310AHGC9

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PE-1210CCMC601STS

Mfr.#: PE-1210CCMC601STS

OMO.#: OMO-PE-1210CCMC601STS-PULSE-ELECTRONICS

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CRCW060310K0FKEA

Mfr.#: CRCW060310K0FKEA

OMO.#: OMO-CRCW060310K0FKEA-VISHAY-DALE

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LFUSCD10065A

Mfr.#: LFUSCD10065A

OMO.#: OMO-LFUSCD10065A-LITTELFUSE

 Schottky Diodes & Rectifiers 650 V, 10 A 2-lead
IDH04G65C6XKSA1

Mfr.#: IDH04G65C6XKSA1

OMO.#: OMO-IDH04G65C6XKSA1-INFINEON-TECHNOLOGIES

 DIODE SCHOTTKY 650V 12A TO220-2
DTC123YEBHZGTL

Mfr.#: DTC123YEBHZGTL

OMO.#: OMO-DTC123YEBHZGTL-ROHM-SEMI

 DTC123YEBHZG IS A TRANSISTOR WIT
可用性
ストック:
Available
注文中:
1988
数量を入力してください:
IDH10G65C6XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$4.46
$4.46
10
$3.79
$37.90
100
$3.29
$329.00
250
$3.12
$780.00
500
$2.80
$1 400.00
1000
$2.36
$2 360.00
2500
$2.24
$5 600.00
5000
$2.16
$10 800.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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