NTS4173PT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SC-70-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

1.3 A

Rds On - Drain-Source Resistance:

150 mOhms

Vgs th - Gate-Source Threshold Voltage:

700 mV

Vgs - Gate-Source Voltage:

10 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

350 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.85 mm

Length:

2.1 mm

Product:

MOSFET Small Signal

Series:

NTS4173P

Transistor Type:

1 P-Channel

Type:

Power MOSFET

Width:

1.24 mm

Brand:

ON Semiconductor

Forward Transconductance - Min:

3.6 S

Fall Time:

6.7 ns, 7.1 ns

Product Type:

MOSFET

Rise Time:

5.2 ns, 6.7 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

16.2 ns, 19.9 ns

Typical Turn-On Delay Time:

5.3 ns, 7.7 ns

Unit Weight:

0.000219 oz

Tags

NTS417, NTS41, NTS4, NTS