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S25FL128SDPBHB210VCX

S25FL128SDPBHB210VCX
Mfr. #:
S25FL128SDPBHB210VCX
Manufacturer:
Cypress Semiconductor
Description:
NOR Flash IC 128 Mb FLASHMEM
Lifecycle:
New from this manufacturer.
Datasheet:
S25FL128SDPBHB210VCX Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
S25FL128SDPBHB210VCX more Information S25FL128SDPBHB210VCX Product Details
Product Attribute
Attribute Value
Manufacturer:
Cypress Semiconductor
Product Category:
NOR Flash
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
BGA-24
Series:
S25FL128S
Memory Size:
128 Mbit
Maximum Clock Frequency:
66 MHz
Interface Type:
SPI
Organization:
16 M x 8
Timing Type:
Asynchronous
Data Bus Width:
8 bit
Supply Voltage - Min:
2.7 V
Supply Voltage - Max:
3.6 V
Supply Current - Max:
100 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 105 C
Qualification:
AEC-Q100
Packaging:
Tray
Speed:
66 MHz
Brand:
Cypress Semiconductor
Moisture Sensitive:
Yes
Product Type:
NOR Flash
Factory Pack Quantity:
338
Subcategory:
Memory & Data Storage
Tradename:
MirrorBit
Tags
S25FL128SDPBHB2, S25FL128SDPBHB, S25FL128SDPB, S25FL128SDP, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
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Mfr.#: S25FL128SDSBHA213

OMO.#: OMO-S25FL128SDSBHA213

 NOR Flash IC 128 Mb FLASH MEMORY
S25FL128SDPBHI213

Mfr.#: S25FL128SDPBHI213

OMO.#: OMO-S25FL128SDPBHI213-CYPRESS-SEMICONDUCTOR

 IC NOR FL-S
S25FL128SDPNFI000

Mfr.#: S25FL128SDPNFI000

OMO.#: OMO-S25FL128SDPNFI000-CYPRESS-SEMICONDUCTOR

 Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, WSON6X8 IN TRAY PACKING
S25FL128SDPMFV001

Mfr.#: S25FL128SDPMFV001

OMO.#: OMO-S25FL128SDPMFV001-CYPRESS-SEMICONDUCTOR

 Flash Memory 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 66-MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TUBE PACKING)
Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of S25FL128SDPBHB210VCX is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
338
$4.27
$1 443.26
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