IXTP32N65XM

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

14 A

Rds On - Drain-Source Resistance:

135 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

54 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

78 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Brand:

IXYS

Forward Transconductance - Min:

13 S

Fall Time:

28 ns

Product Type:

MOSFET

Rise Time:

49 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

58 ns

Typical Turn-On Delay Time:

23 ns

Unit Weight:

0.012346 oz

Tags

IXTP32N, IXTP32, IXTP3, IXTP, IXT