IRFI3306GPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

71 A

Rds On - Drain-Source Resistance:

3.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

90 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

46 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Width:

4.4 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

89 S

Fall Time:

33 ns

Product Type:

MOSFET

Rise Time:

30 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

45 ns

Typical Turn-On Delay Time:

15 ns

Part # Aliases:

SP001556626

Unit Weight:

0.211644 oz

Tags

IRFI33, IRFI3, IRFI, IRF